Coated platen design for plasma immersion ion implantation

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces nonsilicon impurities that may attach to the silicon substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments. References Cited [Referenced By] U.S. Patent Documents United States Patent 6,217,724 Chu , et al. April 17, 2001 Inventors: Chu; Paul K. (Kowloon, HK), Chan; Chung (Newton, MA) Assignee: Silicon General Corporation (Campbell, CA) Appl. No.: 09/215,094 Filed: December 18, 1998 Current U.S. Class: 204/192.37 ; 118/723I; 118/723IR; 118/723MP; 118/728; 118/733; 156/345.51; 204/192.32; 204/298.15; 204/298.32; 204/298.36; 427/523; 427/524; 427/527 Current International Class: C23C 14/50 (20060101); C23C 14/48 (20060101); C23C 16/507 (20060101); C23C 14/56 (20060101); C23C 16/50 (20060101); H01J 37/32 (20060101); C23C 014/50 () Field of Search: 118/723I,723IR,723MP,728,733 427/523,524,527 204/192.32,192.37,298.32,298.36,298.15 156/345 4579609 April 1986 Reif et al. 5134301 July 1992 Kamata et al. 5292393 March 1994 Maydan et al. 5653811 August 1997 Chan Page 1 of 11 United States Patent: 6217724